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Bonding Silicon Electrode

  • Bonded Silicon Electrode

    Bonded Silicon Electrode is a silicon electrode made from silicon and graphite through a special bonding process. It installed on the electrode part of the Upper Process Chamber of the semiconductor dry etching process facility is a key part that evenly sprays the mixed gas for Wafer etching through Micro Hole.

    It is a consumable part with a replacement cycle due to etching by RF Plasma.

    Key features

    •      Product： Bonded Silicon Electrode

    •      Material： Silicon P100

    •      Process:  Etch

    •      Wafer:    6” 、8”

    •      Max Size：Φ313x 25.4mm(T)

    •      Surface： Polishing Or Lapping

    Product Specifications

    No. OEM P/N Description Process
    1 839-011906-001 ELECTRODE,SILICON,6" ETCH 6"
    2 839-011906-100 ELECTRODE,SILICON,6" ETCH 6" 
    3 839-011906-902 ELCTD,SILICON,HI TEMP,POLISH,6IN ETCH 6"
    4 839-011906-912 ELECTRODE,SILICON,POLISH ETCH 6"
    5 839-011907-001 A ELECTRODE,SILICON,8" ETCH 8"
    6 839-011907-100 ELCTD,SILICON,8",HI TEMP ETCH 8"
    7 839-011907-111 EXELAN ELCTD,SILICON,8" ETCH 8"
    8 839-011907-222 ELCTD,SI,8IN,LR,SM HOLE,LCR ETCH 8"
    9 839-011907-334 ELCTD,SILICON,8 IN,SM,HOLE,LR ETCH 8"
    10 839-011907-422 ELCTD,SI,8IN,LR,SM HOLE,LCR.LS ETCH 8"
    11 839-011907-902 ELECTRODE,SILICON,POLISH,HCB,8IN ETCH 8"
    12 839-011907-912 ELECTRODE,SILICON,POLISH,HCB,8IN ETCH 8"
    13 839-011907-913 ELECTRODE,SILICON,POLISH,HCB,8IN ETCH 8"
    14 839-015480-003 ASSY,UPR ELCTD,.28STEP,TC,200MM,2300 ETCH 8"
    15 839-015480-005 ASSY,UPR ELCTD,.15STEP,TC,200MM,2300 ETCH 8"
    16 839-015480-010 ASSY,UPR ELCTD,.28STEP,TC,200MM ETCH 8"
    17 839-021113-002 ASSY,ELCTD,INNER,TC 300MM ETCH 12"
    18 839-021113-095 ASSY,ELCTD,INNER,TC 300MM ETCH 12"
    19 839-443215-101 ELCTD,HP,SILICON,8IN,SM HOLE ETCH 8"
    20 839-443215-502 ELCTD,SILICON,L RES,SM HOLE,8 IN ETCH 8"
    21 839-443215-504 ELCTD,SILICON,L RES,SM HOLE,8 IN,HPP ETCH 8"
    22 839-443215-514 ELCTD,SI,LOW-RES,SM-HOLE,8IN,HPP ETCH 8"
Bonded Silicon Electrode is a silicon electrode made from silicon and graphite through a special bonding process. It installed on the electrode part of the Upper Process Chamber of the semiconductor dry etching process facility is a key part that evenly sprays the mixed gas for Wafer etching through Micro Hole.
It is a consumable part with a replacement cycle due to etching by RF Plasma.
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